@all plz dont post anything about the result or ansker key of AAI..instead post some question so that it may help u i future exam...
AAi mechanical ka exam kab hai?
All substances except _________ which can form permanent magnets, exhibit magnetic effects
- Ferrimagnetic materials
- Paramagnetic materials
- Anti-ferromagnetic materials
- Ferromagnetic materials
0 voters
Size of nucleus of an atom is measured in
- fermions
- Angstrom
0 voters
When a transistor is connected in CE mode it will have
- Negligible input R. and high O/p R.
- High inp. R. and low o/p R.
- Medium i/p R. and high o/p R.
- Low i/p and o/p R.
0 voters
A transistor has gain 100,lower and upper cutoff freq. 50hz and 50khz. Calculate gain(3db) at cutoff freq.
- 17
- 37
0 voters
How many eco-sensitive zones for effective buffer zone for wildlife areas are approved by the government?
- 320
- 167
- 122
- 222
0 voters
Adani Power Limited has signed an MOU with which other organisation to set up power plants in Bangladesh?
- Reliance Power Ltd.
- Rattan India Power Ltd.
- Tata Group
- Jindal Power Ltd.
0 voters
Which of the following is known as a pulse strecher
- none of these
- astable multivibrator
- bistable multivibrator
- monostable multivibrator
0 voters
Figure of merit of PAM
- 2
- 0.5
- 1
- 4
0 voters
how the preparation for ESE guys...hope u all r set to go for it....best of luck guys....
BEL 2014 question....
1.which is not true abt powerpush pull ampr..........dat it require single power supply....
2>HWRefficiency....40.6%...
3>numerical on darlington cb ampr current gain.=1,....
4>FET is vol controlled device with high input resis....
5>above pinch off ....id remain constant...
6>why gate to sourse is not operated with positive bias.......to cancel gate current effect..optn a..........
7>i ques on varactrdiode..
8>mosfetis used in enhancement mode......
9> when gate is made positive then mosfet works in enhancement mode.....
10>noise factor=input snr/op snr..
11>for high freq....grown transistor......
12>best coupling=traxformer........
13>in mid freq range external capac sc n internal oc....
14>q pt will move up.....
15>cc ampr gaion=.53 optn a...
16>stability of cc can be increased bi increasing emitter resi...nd decr..baseresis......
17>depletion layer me im mobile particles....
18>RC coupled ampr me mid band gain bdane ke liye.....all of above ans........
19>diagram ke saval me..........current mirror will measure Ico......
.20>output resis=500k.....
21>superbeta ...darlington.....
22>leakage curr in npn is due to hole flowing from coll to base....
23>higher freq=8.2k......
24>to find forward curr gain.......output sc......
25>freqcan be increased by.......decringcoupling capac......
26>1-2 ques on power spectral density.....it is alws positive and even fun.....
28>which is used in if stage of receiver.....double tuned traxformer coupled ampr.......
29>2-3 ques on modulation index based power ntotal curr formula......
30>polarisation is due to transverse nature of ef......
31>two cirularly polarised waves..will produce elleptical pola.........
32>no of gates in LSI-100-1000.....
33>3-4 QUES ON DIGITAL....
34>ASTABLE FREQ...1//1.38RC,........
35>purpose of introducingfeedback......optn d...reset counter......
36>dynamic memory.....mosfet....
37>number of quantization levels 128.. max frequency component 4 khz.. bandwidth of pcm(a) 4k(b) 8k (c) 16k (d) 128 k
1.which is not true abt powerpush pull ampr..........dat it require single power supply....
2>HWRefficiency....40.6%...
3>numerical on darlington cb ampr current gain.=1,....
4>FET is vol controlled device with high input resis....
5>above pinch off ....id remain constant...
6>why gate to sourse is not operated with positive bias.......to cancel gate current effect..optn a..........
7>i ques on varactrdiode..
8>mosfetis used in enhancement mode......
9> when gate is made positive then mosfet works in enhancement mode.....
10>noise factor=input snr/op snr..
11>for high freq....grown transistor......
12>best coupling=traxformer........
13>in mid freq range external capac sc n internal oc....
14>q pt will move up.....
15>cc ampr gaion=.53 optn a...
16>stability of cc can be increased bi increasing emitter resi...nd decr..baseresis......
17>depletion layer me im mobile particles....
18>RC coupled ampr me mid band gain bdane ke liye.....all of above ans........
19>diagram ke saval me..........current mirror will measure Ico......
.20>output resis=500k.....
21>superbeta ...darlington.....
22>leakage curr in npn is due to hole flowing from coll to base....
23>higher freq=8.2k......
24>to find forward curr gain.......output sc......
25>freqcan be increased by.......decringcoupling capac......
26>1-2 ques on power spectral density.....it is alws positive and even fun.....
28>which is used in if stage of receiver.....double tuned traxformer coupled ampr.......
29>2-3 ques on modulation index based power ntotal curr formula......
30>polarisation is due to transverse nature of ef......
31>two cirularly polarised waves..will produce elleptical pola.........
32>no of gates in LSI-100-1000.....
33>3-4 QUES ON DIGITAL....
34>ASTABLE FREQ...1//1.38RC,........
35>purpose of introducingfeedback......optn d...reset counter......
36>dynamic memory.....mosfet....
37>number of quantization levels 128.. max frequency component 4 khz.. bandwidth of pcm(a) 4k(b) 8k (c) 16k (d) 128 k
BEL 2014 question....
1.which is not true abt powerpush pull ampr..........dat it require single power supply....
2>HWRefficiency....40.6%...
3>numerical on darlington cb ampr current gain.=1,....
4>FET is vol controlled device with high input resis....
5>above pinch off ....id remain constant...
6>why gate to sourse is not operated with positive bias.......to cancel gate current effect..optn a..........
7>i ques on varactrdiode..
8>mosfetis used in enhancement mode......
9> when gate is made positive then mosfet works in enhancement mode.....
10>noise factor=input snr/op snr..
11>for high freq....grown transistor......
12>best coupling=traxformer........
13>in mid freq range external capac sc n internal oc....
14>q pt will move up.....
15>cc ampr gaion=.53 optn a...
16>stability of cc can be increased bi increasing emitter resi...nd decr..baseresis......
17>depletion layer me im mobile particles....
18>RC coupled ampr me mid band gain bdane ke liye.....all of above ans........
19>diagram ke saval me..........current mirror will measure Ico......
.20>output resis=500k.....
21>superbeta ...darlington.....
22>leakage curr in npn is due to hole flowing from coll to base....
23>higher freq=8.2k......
24>to find forward curr gain.......output sc......
25>freqcan be increased by.......decringcoupling capac......
26>1-2 ques on power spectral density.....it is alws positive and even fun.....
28>which is used in if stage of receiver.....double tuned traxformer coupled ampr.......
29>2-3 ques on modulation index based power ntotal curr formula......
30>polarisation is due to transverse nature of ef......
31>two cirularly polarised waves..will produce elleptical pola.........
32>no of gates in LSI-100-1000.....
33>3-4 QUES ON DIGITAL....
34>ASTABLE FREQ...1//1.38RC,........
35>purpose of introducingfeedback......optn d...reset counter......
36>dynamic memory.....mosfet....
37>number of quantization levels 128.. max frequency component 4 khz.. bandwidth of pcm(a) 4k(b) 8k (c) 16k (d) 128 k
1.which is not true abt powerpush pull ampr..........dat it require single power supply....
2>HWRefficiency....40.6%...
3>numerical on darlington cb ampr current gain.=1,....
4>FET is vol controlled device with high input resis....
5>above pinch off ....id remain constant...
6>why gate to sourse is not operated with positive bias.......to cancel gate current effect..optn a..........
7>i ques on varactrdiode..
8>mosfetis used in enhancement mode......
9> when gate is made positive then mosfet works in enhancement mode.....
10>noise factor=input snr/op snr..
11>for high freq....grown transistor......
12>best coupling=traxformer........
13>in mid freq range external capac sc n internal oc....
14>q pt will move up.....
15>cc ampr gaion=.53 optn a...
16>stability of cc can be increased bi increasing emitter resi...nd decr..baseresis......
17>depletion layer me im mobile particles....
18>RC coupled ampr me mid band gain bdane ke liye.....all of above ans........
19>diagram ke saval me..........current mirror will measure Ico......
.20>output resis=500k.....
21>superbeta ...darlington.....
22>leakage curr in npn is due to hole flowing from coll to base....
23>higher freq=8.2k......
24>to find forward curr gain.......output sc......
25>freqcan be increased by.......decringcoupling capac......
26>1-2 ques on power spectral density.....it is alws positive and even fun.....
28>which is used in if stage of receiver.....double tuned traxformer coupled ampr.......
29>2-3 ques on modulation index based power ntotal curr formula......
30>polarisation is due to transverse nature of ef......
31>two cirularly polarised waves..will produce elleptical pola.........
32>no of gates in LSI-100-1000.....
33>3-4 QUES ON DIGITAL....
34>ASTABLE FREQ...1//1.38RC,........
35>purpose of introducingfeedback......optn d...reset counter......
36>dynamic memory.....mosfet....
37>number of quantization levels 128.. max frequency component 4 khz.. bandwidth of pcm(a) 4k(b) 8k (c) 16k (d) 128 k
fastest switching device is
- triode
- mosfet
- bjt
- jfet
0 voters
Power amplifier has max efficiency
- class a
- class c
- class ab
- class b
0 voters
37>number of quantization levels 128.. max frequency component 4 khz.. bandwidth of pcm(a) 4k(b) 8k (c) 16k (d) 128 k
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REsult kb tak ayenga aai ka
Any books/material available for aai je commercial/cargo...any previous papers......
India's longest route train?
LoNgest navigable canal of the country?